Manufacture :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFX62N25
Per Unit
$10.05
RFQ
1,577
Ships today + free overnight shipping
IXYS MOSFET N-CH 250V 62A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 390W (Tc) N-Channel - 250V 62A (Tc) 35 mOhm @ 31A, 10V 4V @ 4mA 240nC @ 10V 6600pF @ 25V 10V ±20V
IXFK24N100F
Per Unit
$38.64
RFQ
3,393
Ships today + free overnight shipping
IXYS-RF MOSFET N-CH 1000V 24A TO264 HiPerRF™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXFK) 560W (Tc) N-Channel - 1000V 24A (Tc) 390 mOhm @ 12A, 10V 5.5V @ 8mA 195nC @ 10V 6600pF @ 25V 10V ±20V
IXFN24N100F
Per Unit
$33.43
RFQ
609
Ships today + free overnight shipping
IXYS-RF MOSFET N-CH 1000V 24A SOT227B HiPerRF™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 600W (Tc) N-Channel - 1000V 24A (Tc) 390 mOhm @ 12A, 10V 5.5V @ 8mA 195nC @ 10V 6600pF @ 25V 10V ±20V
IXFX24N100F
Per Unit
$26.74
RFQ
940
Ships today + free overnight shipping
IXYS-RF MOSFET N-CH 1000V 24A PLUS247-3 HiPerRF™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 560W (Tc) N-Channel - 1000V 24A (Tc) 390 mOhm @ 12A, 10V 5.5V @ 8mA 195nC @ 10V 6600pF @ 25V 10V ±20V
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