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5 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,249
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Microsemi Corporation | MOSFET N-CH 600V 55A SOT-227 | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 568W (Tc) | N-Channel | - | 600V | 55A (Tc) | 80 mOhm @ 500mA, 10V | 4V @ 5mA | 870nC @ 10V | 14500pF @ 25V | 10V | ±30V | ||
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2,014
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IXYS | MOSFET P-CH 200V 32A TO-247 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 300W (Tc) | P-Channel | - | 200V | 32A (Tc) | 130 mOhm @ 16A, 10V | 4V @ 250µA | 185nC @ 10V | 14500pF @ 25V | 10V | ±15V | |||
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2,559
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IXYS | MOSFET P-CH 200V 32A TO-263 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 300W (Tc) | P-Channel | - | 200V | 32A (Tc) | 130 mOhm @ 16A, 10V | 4V @ 250µA | 185nC @ 10V | 14500pF @ 25V | 10V | ±15V | |||
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2,028
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IXYS | MOSFET P-CH 200V 32A TO-220 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 300W (Tc) | P-Channel | - | 200V | 32A (Tc) | 130 mOhm @ 16A, 10V | 4V @ 250µA | 185nC @ 10V | 14500pF @ 25V | 10V | ±15V | |||
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1,759
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IXYS | MOSFET N-CH 300V 130A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 700W (Tc) | N-Channel | - | 300V | 130A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 8mA | 380nC @ 10V | 14500pF @ 25V | 10V | ±20V |