Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPP60R360P7XKSA1
Per Unit
$1.62
RFQ
3,931
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 650V 9A TO220-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 41W (Tc) N-Channel - 650V 9A (Tc) 360 mOhm @ 2.7A, 10V 4V @ 140µA 13nC @ 10V 555pF @ 400V 10V ±20V
IPA60R360P7XKSA1
Per Unit
$1.62
RFQ
1,843
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CHANNEL 650V 9A TO220 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 22W (Tc) N-Channel - 650V 9A (Tc) 360 mOhm @ 2.7A, 10V 4V @ 140µA 13nC @ 10V 555pF @ 400V 10V ±20V
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