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5 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,417
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Infineon Technologies | MOSFET N-CH 650V 21.7A TO-220 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 240W (Tc) | N-Channel | - | 650V | 21.7A (Tc) | 185 mOhm @ 15.4A, 10V | 5V @ 1.2mA | 143nC @ 10V | 3160pF @ 25V | 10V | ±20V | ||
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1,751
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 900V 10A TO220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 50W (Tc) | N-Channel | - | 900V | 10A (Tc) | 980 mOhm @ 5A, 10V | 4.5V @ 250µA | 75nC @ 10V | 3160pF @ 25V | 10V | ±30V | ||
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1,888
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 900V 10A TO247 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 403W (Tc) | N-Channel | - | 900V | 10A (Tc) | 980 mOhm @ 5A, 10V | 4.5V @ 250µA | 75nC @ 10V | 3160pF @ 25V | 10V | ±30V | ||
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830
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Infineon Technologies | MOSFET N-CH 650V 21.7A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 240W (Tc) | N-Channel | - | 650V | 21.7A (Tc) | 185 mOhm @ 15.4A, 10V | 5V @ 1.2mA | 143nC @ 10V | 3160pF @ 25V | 10V | ±20V | |||
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2,616
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IXYS | MOSFET N-CH 300V 50A TO-247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 690W (Tc) | N-Channel | - | 300V | 50A (Tc) | 80 mOhm @ 25A, 10V | 6.5V @ 4mA | 65nC @ 10V | 3160pF @ 25V | 10V | ±20V |