- Part Status :
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9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,812
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Infineon Technologies | MOSFET N-CH 500V 21A I2PAK | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 208W (Tc) | N-Channel | - | 500V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | ||
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3,543
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Infineon Technologies | MOSFET N-CH 560V 21A TO-220AB | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 208W (Tc) | N-Channel | - | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | ||
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3,201
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Infineon Technologies | MOSFET N-CH 560V 21A I2PAK | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 208W (Tc) | N-Channel | - | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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3,849
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Infineon Technologies | MOSFET N-CH 560V 21A TO220FP | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 34.5W (Tc) | N-Channel | - | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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2,520
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Infineon Technologies | MOSFET N-CH 560V 21A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 208W (Tc) | N-Channel | - | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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1,659
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Infineon Technologies | MOSFET N-CH 500V 21A TO220-3 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 208W (Tc) | N-Channel | - | 500V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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804
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Infineon Technologies | MOSFET N-CH 560V 21A TO-263 | CoolMOS™ | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 208W (Tc) | N-Channel | - | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | ||
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1,834
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Infineon Technologies | MOSFET N-CH 560V 21A TO-263 | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 208W (Tc) | N-Channel | - | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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2,590
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Infineon Technologies | MOSFET N-CH 560V 21A TO-263 | CoolMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 208W (Tc) | N-Channel | - | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V |
