- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,320
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 9A 8-TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 18W (Tc) | N-Channel | - | 60V | 9A (Ta) | 22 mOhm @ 4.5A, 10V | 4V @ 100µA | 12nC @ 10V | 710pF @ 30V | 6.5V, 10V | ±20V | ||
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2,638
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 9A 8-TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 18W (Tc) | N-Channel | - | 60V | 9A (Ta) | 22 mOhm @ 4.5A, 10V | 4V @ 100µA | 12nC @ 10V | 710pF @ 30V | 6.5V, 10V | ±20V | |||
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1,446
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 9A 8-TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 18W (Tc) | N-Channel | - | 60V | 9A (Ta) | 22 mOhm @ 4.5A, 10V | 4V @ 100µA | 12nC @ 10V | 710pF @ 30V | 6.5V, 10V | ±20V |
