- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,122
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 30V 25A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 19A (Ta) | 4.7 mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | 2496pF @ 10V | 4.5V, 10V | ±20V | |||
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2,460
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 30V 27A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 59W (Tc) | N-Channel | - | 30V | 27A (Ta), 50A (Tc) | 2.95 mOhm @ 20A, 10V | 2.2V @ 50µA | 59nC @ 10V | 3610pF @ 10V | 4.5V, 10V | ±20V |
