4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STD25NF20
Per Unit
$1.14
RFQ
3,488
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 200V 18A DPAK STripFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 110W (Tc) N-Channel - 200V 18A (Tc) 125 mOhm @ 10A, 10V 4V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±20V
BUK9Y22-30B,115
Per Unit
$0.72
RFQ
2,009
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 30V 37.7A LFPAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 59.4W (Tc) N-Channel - 30V 37.7A (Tc) 19 mOhm @ 20A, 10V 2V @ 1mA 10.5nC @ 5V 940pF @ 25V 5V, 10V ±15V
IRF7450TRPBF
Per Unit
$1.75
RFQ
1,072
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 200V 2.5A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 2.5A (Ta) 170 mOhm @ 1.5A, 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±30V
STD20NF20
Per Unit
$2.05
RFQ
3,018
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 200V 18A DPAK STripFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 110W (Tc) N-Channel - 200V 18A (Tc) 125 mOhm @ 10A, 10V 4V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±20V
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