- Manufacture :
- Series :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,056
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ON Semiconductor | MOSFET N-CH 250V 8.8A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 74W (Tc) | N-Channel | - | 250V | 8.8A (Tc) | 430 mOhm @ 4.4A, 10V | 4V @ 250µA | 35nC @ 10V | 710pF @ 25V | 10V | ±30V | ||
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3,686
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|
Vishay Siliconix | MOSFET P-CH 60V 8.8A DPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
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3,451
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Vishay Siliconix | MOSFET P-CH 60V 8.8A DPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
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2,604
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Vishay Siliconix | MOSFET P-CH 60V 8.8A DPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
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2,522
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|
Vishay Siliconix | MOSFET P-CH 60V 8.8A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
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2,515
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Nexperia USA Inc. | MOSFET N-CH 200V 8.8A 8HVSON | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 50W (Tc) | N-Channel | - | 200V | 8.8A (Tc) | 294 mOhm @ 2.6A, 10V | 4V @ 1mA | 13.3nC @ 10V | 657pF @ 30V | 6V, 10V | ±20V | ||
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1,897
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Nexperia USA Inc. | MOSFET N-CH 200V 8.8A 8HVSON | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 50W (Tc) | N-Channel | - | 200V | 8.8A (Tc) | 294 mOhm @ 2.6A, 10V | 4V @ 1mA | 13.3nC @ 10V | 657pF @ 30V | 6V, 10V | ±20V | |||
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1,913
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Nexperia USA Inc. | MOSFET N-CH 200V 8.8A 8HVSON | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 50W (Tc) | N-Channel | - | 200V | 8.8A (Tc) | 294 mOhm @ 2.6A, 10V | 4V @ 1mA | 13.3nC @ 10V | 657pF @ 30V | 6V, 10V | ±20V |
