7 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NTB6412ANT4G
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RFQ
1,858
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ON Semiconductor MOSFET N-CH 100V 58A D2PAK - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 167W (Tc) N-Channel 100V 58A (Tc) 18.2 mOhm @ 58A, 10V 4V @ 250µA 100nC @ 10V 3500pF @ 25V 10V ±20V
NTB6412ANT4G
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RFQ
941
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ON Semiconductor MOSFET N-CH 100V 58A D2PAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 167W (Tc) N-Channel 100V 58A (Tc) 18.2 mOhm @ 58A, 10V 4V @ 250µA 100nC @ 10V 3500pF @ 25V 10V ±20V
NTB6412ANT4G
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RFQ
3,448
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ON Semiconductor MOSFET N-CH 100V 58A D2PAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 167W (Tc) N-Channel 100V 58A (Tc) 18.2 mOhm @ 58A, 10V 4V @ 250µA 100nC @ 10V 3500pF @ 25V 10V ±20V
TSM120N10PQ56 RLG
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RFQ
2,350
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Taiwan Semiconductor Corporation MOSFET N-CH 100V 58A 8PDFN - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 36W (Tc) N-Channel 100V 58A (Tc) 12 mOhm @ 30A, 10V 4V @ 250µA 145nC @ 10V 3902pF @ 30V 10V ±20V
TSM120N10PQ56 RLG
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RFQ
1,101
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Taiwan Semiconductor Corporation MOSFET N-CH 100V 58A 8PDFN - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 36W (Tc) N-Channel 100V 58A (Tc) 12 mOhm @ 30A, 10V 4V @ 250µA 145nC @ 10V 3902pF @ 30V 10V ±20V
TSM120N10PQ56 RLG
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RFQ
1,633
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Taiwan Semiconductor Corporation MOSFET N-CH 100V 58A 8PDFN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 36W (Tc) N-Channel 100V 58A (Tc) 12 mOhm @ 30A, 10V 4V @ 250µA 145nC @ 10V 3902pF @ 30V 10V ±20V
NTB6412ANG
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RFQ
1,008
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ON Semiconductor MOSFET N-CH 100V 58A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 167W (Tc) N-Channel 100V 58A (Tc) 18.2 mOhm @ 58A, 10V 4V @ 250µA 100nC @ 10V 3500pF @ 25V 10V ±20V
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