Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFZ46ZS
GET PRICE
RFQ
1,235
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 55V 51A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 82W (Tc) N-Channel - 55V 51A (Tc) 13.6 mOhm @ 31A, 10V 4V @ 250µA 46nC @ 10V 1460pF @ 25V 10V ±20V
IRFZ44ZS
GET PRICE
RFQ
1,829
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 55V 51A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 80W (Tc) N-Channel - 55V 51A (Tc) 13.9 mOhm @ 31A, 10V 4V @ 250µA 43nC @ 10V 1420pF @ 25V 10V ±20V
IRLZ44ZS
GET PRICE
RFQ
3,108
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 55V 51A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 80W (Tc) N-Channel - 55V 51A (Tc) 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V 1620pF @ 25V 4.5V, 10V ±16V
IRLZ44ZSTRRPBF
GET PRICE
RFQ
2,388
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 55V 51A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 80W (Tc) N-Channel - 55V 51A (Tc) 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V 1620pF @ 25V 4.5V, 10V ±16V
Page 1 / 1