Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BUK98180-100A,115
GET PRICE
RFQ
3,580
Ships today + free overnight shipping
NXP USA Inc. MOSFET N-CH 100V 4.6A SOT-223 Automotive, AEC-Q101, TrenchMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8W (Tc) N-Channel - 100V 4.6A (Tc) 173 mOhm @ 5A, 10V 2V @ 1mA - 619pF @ 25V 4.5V, 10V ±10V
PMN49EN,135
GET PRICE
RFQ
3,420
Ships today + free overnight shipping
NXP USA Inc. MOSFET N-CH 30V 4.6A 6TSOP TrenchMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-74, SOT-457 6-TSOP 1.75W (Tc) N-Channel - 30V 4.6A (Tc) 47 mOhm @ 2A, 10V 2V @ 1mA 8.8nC @ 4.5V 350pF @ 30V 4.5V, 10V ±20V
Page 1 / 1