- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,311
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Infineon Technologies | MOSFET N-CH 55V 85A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 180W (Tc) | N-Channel | - | 55V | 85A (Tc) | 11 mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | 3210pF @ 25V | 10V | ±20V | ||
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2,244
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Infineon Technologies | MOSFET N-CH 55V 85A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 180W (Tc) | N-Channel | - | 55V | 85A (Tc) | 11 mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | 3210pF @ 25V | 10V | ±20V | ||
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828
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Infineon Technologies | MOSFET N-CH 55V 85A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 180W (Tc) | N-Channel | - | 55V | 85A (Tc) | 11 mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | 3210pF @ 25V | 10V | ±20V |
