- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,477
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Infineon Technologies | MOSFET N-CH 100V 11A | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 39W (Tc) | N-Channel | - | 100V | 11A (Ta), 35A (Tc) | 16.4 mOhm @ 21A, 10V | 3.6V @ 50µA | 19nC @ 10V | 733pF @ 50V | 10V | ±20V | ||
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3,274
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Infineon Technologies | MOSFET N-CH 100V 11A | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 39W (Tc) | N-Channel | - | 100V | 11A (Ta), 35A (Tc) | 16.4 mOhm @ 21A, 10V | 3.6V @ 50µA | 19nC @ 10V | 733pF @ 50V | 10V | ±20V | ||
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1,770
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Infineon Technologies | MOSFET N-CH 100V 11A | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 39W (Tc) | N-Channel | - | 100V | 11A (Ta), 35A (Tc) | 16.4 mOhm @ 21A, 10V | 3.6V @ 50µA | 19nC @ 10V | 733pF @ 50V | 10V | ±20V | ||
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2,189
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Infineon Technologies | MOSFET N-CH 100V 9.3A | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 2.8W (Ta), 37W (Tc) | N-Channel | - | 100V | 9.3A (Ta), 34A (Tc) | 16.4 mOhm @ 20A, 10V | 3.6V @ 50µA | 19nC @ 10V | 733pF @ 50V | 10V | ±20V |
