Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Vgs (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
DMNH4011SK3Q-13
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RFQ
2,429
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Diodes Incorporated MOSFET N-CH 40V 50A TO252 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 2.6W (Ta) N-Channel - 40V 50A (Tc) 10 mOhm @ 50A, 10V 4V @ 250µA 25.5nC @ 10V 1405pF @ 20V 4.5V, 10V 20V
SQD50N10-8M9L_GE3
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RFQ
3,030
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Vishay Siliconix MOSFET N-CHAN 100V TO252 Automotive, AEC-Q101, TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 136W (Tc) N-Channel - 100V 50A (Tc) 8.9 mOhm @ 15A, 10V 2.5V @ 250µA 70nC @ 10V 2950pF @ 25V 4.5V, 10V ±20V
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