Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHD9N60E-GE3
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RFQ
2,954
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Vishay Siliconix MOSFET N-CHANNEL 600V 9A DPAK E Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 78W (Tc) N-Channel - 600V 9A (Tc) 368 mOhm @ 4.5A, 10V 4.5V @ 250µA 52nC @ 10V 778pF @ 100V 10V ±30V
SIHD6N62ET1-GE3
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RFQ
2,363
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Vishay Siliconix MOSFET N-CH 620V 6A TO252AA E Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 78W (Tc) N-Channel - 620V 6A (Tc) 900 mOhm @ 3A, 10V 4V @ 250µA 34nC @ 10V 578pF @ 100V 10V ±30V
SIHD2N80E-GE3
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RFQ
2,971
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Vishay Siliconix MOSFET N-CH 800V 2.8A DPAK E Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 62.5W (Tc) N-Channel - 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V
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