Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRLR3303TRPBF
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RFQ
3,065
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Infineon Technologies MOSFET N-CH 30V 35A DPAK HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 68W (Tc) N-Channel - 30V 35A (Tc) 31 mOhm @ 21A, 10V 1V @ 250µA 26nC @ 4.5V 870pF @ 25V 4.5V, 10V ±16V
IRFR3709ZTRPBF
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RFQ
2,282
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Infineon Technologies MOSFET N-CH 30V 86A DPAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 79W (Tc) N-Channel - 30V 86A (Tc) 6.5 mOhm @ 15A, 10V 2.25V @ 250µA 26nC @ 4.5V 2330pF @ 15V 4.5V, 10V ±20V
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