- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,732
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Infineon Technologies | MOSFET P-CH 40V 6.2A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 40V | 6.2A (Ta) | 41 mOhm @ 6.2A, 10V | 3V @ 250µA | 80nC @ 10V | 3220pF @ 25V | 4.5V, 10V | ±20V | ||||
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1,269
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Infineon Technologies | MOSFET P-CH 40V 10.5A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 40V | 10.5A (Ta) | 15 mOhm @ 10.5A, 10V | 3V @ 250µA | 110nC @ 10V | 9250pF @ 25V | 4.5V, 10V | ±20V | ||||
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688
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Infineon Technologies | MOSFET N-CH 40V 9A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 40V | 9A (Ta) | 17 mOhm @ 9A, 10V | 3V @ 250µA | 23nC @ 4.5V | 2000pF @ 20V | 4.5V, 10V | ±20V | ||||
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3,156
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Infineon Technologies | MOSFET N-CH 40V 18A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 40V | 18A (Ta) | 5 mOhm @ 17A, 10V | 2.25V @ 250µA | 50nC @ 4.5V | 4500pF @ 20V | 4.5V, 10V | ±20V |