- Series :
- Packaging :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,171
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A SOT-23F | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 4A (Ta) | 55 mOhm @ 4A, 4.5V | - | - | 190pF @ 30V | 1.8V, 4.5V | ±12V | ||
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3,187
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A SOT-23F | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 4A (Ta) | 55 mOhm @ 4A, 4.5V | - | - | 190pF @ 30V | 1.8V, 4.5V | ±12V | |||
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1,871
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A SOT-23F | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 4A (Ta) | 55 mOhm @ 4A, 4.5V | - | - | 190pF @ 30V | 1.8V, 4.5V | ±12V | |||
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1,956
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Toshiba Semiconductor and Storage | MOSFET P CH 30V 4A SOT-23F | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 30V | 4A (Ta) | 71 mOhm @ 3A, 10V | 2V @ 100µA | 5.9nC @ 10V | 280pF @ 15V | 4V, 10V | ±20V | ||
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1,788
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Toshiba Semiconductor and Storage | MOSFET P CH 30V 4A SOT-23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 30V | 4A (Ta) | 71 mOhm @ 3A, 10V | 2V @ 100µA | 5.9nC @ 10V | 280pF @ 15V | 4V, 10V | ±20V | |||
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3,442
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Toshiba Semiconductor and Storage | MOSFET P CH 30V 4A SOT-23F | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 30V | 4A (Ta) | 71 mOhm @ 3A, 10V | 2V @ 100µA | 5.9nC @ 10V | 280pF @ 15V | 4V, 10V | ±20V |