- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,275
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EPC | TRANS GAN 100V 2.7A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 2.7A (Ta) | 160 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.48nC @ 5V | 55pF @ 50V | 5V | +6V, -4V | ||
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2,186
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EPC | TRANS GAN 100V 2.7A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 2.7A (Ta) | 160 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.48nC @ 5V | 55pF @ 50V | 5V | +6V, -4V | |||
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2,212
Ships today + free overnight shipping
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EPC | TRANS GAN 100V 2.7A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 2.7A (Ta) | 160 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.48nC @ 5V | 55pF @ 50V | 5V | +6V, -4V |
