- Part Status :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,161
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Infineon Technologies | MOSFET N-CH 100V DIRECTFET-SH | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 4.8V @ 25µA | 11.7nC @ 10V | 530pF @ 25V | 10V | ±20V | ||
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2,401
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Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 4.8V @ 25µA | 11.7nC @ 10V | 530pF @ 25V | 10V | ±20V | ||
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1,710
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Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | 10V | ±20V | ||
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1,499
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Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | 10V | ±20V | |||
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1,787
Ships today + free overnight shipping
|
Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 4.8V @ 25µA | 11.7nC @ 10V | 530pF @ 25V | 10V | ±20V |
