5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHM30NQ10T,518
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RFQ
3,540
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NXP USA Inc. MOSFET N-CH 100V 37.6A 8HVSON TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-HVSON (6x5) 62.5W (Tc) N-Channel 100V 37.6A (Tc) 20 mOhm @ 18A, 10V 4V @ 1mA 53.7nC @ 10V 3600pF @ 25V 10V ±20V
PHM25NQ10T,518
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RFQ
868
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NXP USA Inc. MOSFET N-CH 100V 30.7A 8HVSON TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-HVSON (6x5) 62.5W (Tc) N-Channel 100V 30.7A (Tc) 30 mOhm @ 10A, 10V 4V @ 1mA 26.6nC @ 10V 1800pF @ 20V 10V ±20V
PSMN035-100LS,115
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RFQ
3,608
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NXP USA Inc. MOSFET N-CH QFN3333 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-DFN3333 (3.3x3.3) 65W (Tc) N-Channel 100V 27A (Tc) 32 mOhm @ 10A, 10V 4V @ 1mA 23nC @ 10V 1350pF @ 50V 10V ±20V
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Per Unit
$0.39
RFQ
2,426
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Diodes Incorporated MOSFET NCH 100V 9.4A 8VDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 155°C (TJ) Surface Mount 8-VDFN Exposed Pad V-DFN3333-8 1W (Ta) N-Channel 100V 9.4A (Ta), 34A (Tc) 15 mOhm @ 20A, 10V 3.5V @ 250µA 33.3nC @ 10V 1871pF @ 50V 4.5V, 10V ±20V
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Per Unit
$0.39
RFQ
2,625
Ships today + free overnight shipping
Diodes Incorporated MOSFET NCH 100V 9.4A 8VDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 155°C (TJ) Surface Mount 8-VDFN Exposed Pad V-DFN3333-8 1W (Ta) N-Channel 100V 9.4A (Ta), 34A (Tc) 15 mOhm @ 20A, 10V 3.5V @ 250µA 33.3nC @ 10V 1871pF @ 50V 4.5V, 10V ±20V
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