- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,443
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Infineon Technologies | MOSFET N-CH 100V 10.3A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 10V | ±20V | ||
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3,049
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Infineon Technologies | MOSFET N-CH 100V 10.3A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 10V | ±20V | ||
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813
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Infineon Technologies | MOSFET N-CH 100V 10.3A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 10V | ±20V | ||
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1,743
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Infineon Technologies | MOSFET N-CH 100V 10.3A TO-263 | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 10V | ±20V | ||
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3,768
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Infineon Technologies | MOSFET N-CH 100V 10.5A DPAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-TO252-3 | 50W (Tc) | N-Channel | - | 100V | 10.5A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | ||
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3,977
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Rohm Semiconductor | MOSFET N-CH 100V 30A LPTS | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 50W (Tc) | N-Channel | - | 100V | 30A (Ta) | 52 mOhm @ 15A, 10V | 2.5V @ 1mA | 50nC @ 10V | 2200pF @ 25V | 4V, 10V | ±20V | |||
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1,991
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STMicroelectronics | MOSFET N-CH 100V 13A DPAK | STripFET™ II | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 50W (Tc) | N-Channel | - | 100V | 13A (Tc) | 130 mOhm @ 5A, 10V | 4V @ 250µA | 21nC @ 10V | 460pF @ 25V | 10V | ±20V | |||
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1,084
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ON Semiconductor | MOSFET N-CH 100V 15.7A DPAK-3 | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 50W (Tc) | N-Channel | - | 100V | 15.7A (Tc) | 75 mOhm @ 12A, 10V | 2.5V @ 250µA | 28.9nC @ 10V | 1465pF @ 25V | 5V, 10V | ±20V | |||
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3,345
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Rohm Semiconductor | MOSFET P-CH 100V 25A LPTS | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 50W (Tc) | P-Channel | - | 100V | 25A (Ta) | 63 mOhm @ 25A, 10V | 2.5V @ 1mA | 60nC @ 5V | 8000pF @ 25V | 4V, 10V | ±20V | |||
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3,887
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 100V 15A TO252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 50W (Tc) | N-Channel | - | 100V | 15A (Tc) | 90 mOhm @ 5A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 1480pF @ 50V | 4.5V, 10V | ±20V | |||
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1,734
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 7A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 50W (Tc) | N-Channel | - | 100V | 7A (Ta) | 48 mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | 470pF @ 10V | 10V | ±20V | |||
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3,557
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STMicroelectronics | MOSFET N-CH 100V 30A DPAK | DeepGATE™, STripFET™ VII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 50W (Tc) | N-Channel | - | 100V | 32A (Tc) | 24 mOhm @ 16A, 10V | 4.5V @ 250µA | 19nC @ 10V | 1270pF @ 50V | 10V | 20V |
