- Manufacture :
- Series :
- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,790
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 100V 2.7A 3SSOT | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 1.5W (Ta) | N-Channel | - | 100V | 2.7A (Ta) | 109 mOhm @ 1.5A, 10V | 4V @ 250µA | 5nC @ 10V | 210pF @ 50V | 6V, 10V | ±20V | |||
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2,391
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 100V TRENCH SSOT-6 | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-SSOT | 1.6W (Ta) | N-Channel | - | 100V | 2.7A (Ta) | 109 mOhm @ 2.7A, 10V | 4V @ 250µA | 5nC @ 10V | 210pF @ 50V | 6V, 10V | ±20V | |||
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2,212
Ships today + free overnight shipping
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EPC | TRANS GAN 100V 2.7A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 2.7A (Ta) | 160 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.48nC @ 5V | 55pF @ 50V | 5V | +6V, -4V |
