- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,454
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 100V 7A 8-SOIC | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 7A (Ta) | 23 mOhm @ 7A, 10V | 4V @ 250µA | 16.5nC @ 10V | 934pF @ 50V | 6V, 10V | ±20V | |||
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1,671
Ships today + free overnight shipping
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Sanken | MOSFET N-CH 100V 7A 8DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) | 3.1W (Ta), 77W (Tc) | N-Channel | - | 100V | 7A (Ta) | 17.6 mOhm @ 20.4A, 10V | 2.5V @ 1mA | 55.8nC @ 10V | 3990pF @ 25V | 4.5V, 10V | ±20V | |||
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1,734
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 7A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 50W (Tc) | N-Channel | - | 100V | 7A (Ta) | 48 mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | 470pF @ 10V | 10V | ±20V |
