- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,117
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 100V 13A 8PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | - | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | 5185pF @ 50V | 4.5V, 10V | ±16V | |||
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2,010
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 100V 13A 8-PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 250W (Tc) | N-Channel | - | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | 4340pF @ 25V | 10V | ±20V |
