- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,727
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EPC | TRANS GAN 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 1A (Ta) | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | 12.5pF @ 50V | 5V | +6V, -4V | ||
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2,563
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EPC | TRANS GAN 100V 550MOHM BUMPED DI | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 1.7A (Ta) | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | 14pF @ 50V | 5V | +6V, -4V |
