Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM120N10PQ56 RLG
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RFQ
1,633
Ships today + free overnight shipping
Taiwan Semiconductor Corporation MOSFET N-CH 100V 58A 8PDFN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 36W (Tc) N-Channel 100V 58A (Tc) 12 mOhm @ 30A, 10V 4V @ 250µA 145nC @ 10V 3902pF @ 30V 10V ±20V
TSM70N10CP ROG
Per Unit
$0.59
RFQ
3,248
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 100V 70A TO252 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 120W (Tc) N-Channel 100V 70A (Tc) 13 mOhm @ 30A, 10V 4V @ 250µA 145nC @ 10V 4300pF @ 30V 10V ±20V
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