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- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,708
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Vishay Siliconix | MOSFET N-CH 100V 22A PPAK SO-8 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.1W (Ta), 29.7W (Tc) | N-Channel | - | 100V | 22A (Tc) | 30.5 mOhm @ 10A, 10V | 2.8V @ 250µA | 19.5nC @ 10V | 580pF @ 50V | 4.5V, 10V | ±20V | |||
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1,096
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STMicroelectronics | MOSFET | Automotive, AEC-Q101, STripFET™ F7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 72W (Tc) | N-Channel | - | 100V | 18A (Tc) | 24 mOhm @ 9A, 10V | 4.5V @ 250µA | 19.5nC @ 10V | 1450pF @ 50V | 10V | ±20V | ||||
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1,699
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Vishay Siliconix | MOSFET N-CH 100V 21A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.1W (Ta), 29.7W (Tc) | N-Channel | - | 100V | 21A (Tc) | 33 mOhm @ 10A, 10V | 3V @ 250µA | 19.5nC @ 10V | 550pF @ 50V | 4.5V, 10V | ±20V | ||||
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634
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Vishay Siliconix | MOSFET N-CH 100V 28A PPAK 1212 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.7W (Ta), 52W (Tc) | N-Channel | - | 100V | 28A (Tc) | 33 mOhm @ 10A, 10V | 3V @ 250µA | 19.5nC @ 10V | 550pF @ 50V | 4.5V, 10V | ±20V |