- Manufacture :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,911
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ON Semiconductor | MOSFET P-CH 100V 6A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.75W (Ta), 50W (Tc) | P-Channel | - | 100V | 6A (Tc) | 660 mOhm @ 3A, 10V | 4V @ 250µA | 22nC @ 10V | 840pF @ 25V | 10V | ±15V | ||
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795
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IXYS | MOSFET N-CH 1000V 6A TO-268 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 180W (Tc) | N-Channel | - | 1000V | 6A (Tc) | 1.9 Ohm @ 3A, 10V | 4.5V @ 2.5mA | 48nC @ 10V | 2200pF @ 25V | 10V | ±20V | |||
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1,678
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IXYS | MOSFET N-CH 1200V 6A TO-268 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 300W (Tc) | N-Channel | - | 1200V | 6A (Tc) | 2.6 Ohm @ 3A, 10V | 5V @ 250µA | 56nC @ 10V | 1950pF @ 25V | 10V | ±20V | |||
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2,100
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Infineon Technologies | MOSFET N-CH 500V 6A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 119W (Tc) | N-Channel | - | 500V | 6A (Tc) | 1.3 Ohm @ 3.7A, 10V | 5V @ 250µA | 34nC @ 10V | 1346pF @ 25V | 10V | ±20V | ||
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1,777
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IXYS | MOSFET N-CH 500V 6A D2-PAK | PolarHV™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 100W (Tc) | N-Channel | - | 500V | 6A (Tc) | 1.1 Ohm @ 3A, 10V | 5V @ 50µA | 14.6nC @ 10V | 740pF @ 25V | 10V | ±30V | |||
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1,169
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IXYS | MOSFET N-CH 1200V 6A D2PAK | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 250W (Tc) | N-Channel | - | 1200V | 6A (Tc) | 2.4 Ohm @ 500mA, 10V | 5V @ 1mA | 92nC @ 10V | 2830pF @ 25V | 10V | ±30V | |||
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1,594
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IXYS | MOSFET N-CH 500V 6A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 300W (Tc) | N-Channel | Depletion Mode | 500V | 6A (Tc) | 500 mOhm @ 3A, 0V | - | 96nC @ 5V | 2800pF @ 25V | - | ±20V | |||
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2,744
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IXYS-RF | MOSFET N-CH 1000V 6A TO268 | HiPerRF™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 (IXFT) | 180W (Tc) | N-Channel | - | 1000V | 6A (Tc) | 1.9 Ohm @ 3A, 10V | 5.5V @ 2.5mA | 54nC @ 10V | 1770pF @ 25V | 10V | ±20V | |||
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3,654
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IXYS | MOSFET N-CH 1000V 6A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 300W (Tc) | N-Channel | Depletion Mode | 1000V | 6A (Tc) | 2.2 Ohm @ 3A, 0V | - | 95nC @ 5V | 2650pF @ 25V | - | ±20V |
