- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,610
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Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1W (Ta) | N-Channel | - | 20V | 800mA (Ta) | 57 mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 177pF @ 10V | 1.2V, 4.5V | ±8V | ||
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2,692
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Nexperia USA Inc. | MOSFET N-CH 60V TO-236AB | Automotive, AEC-Q101 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 323mW (Ta), 554mW (Tc) | N-Channel | - | 60V | 800mA (Ta) | 380 mOhm @ 900mA, 10V | 2.7V @ 250µA | 3.6nC @ 10V | 101pF @ 30V | 4.5V, 10V | ±20V | ||
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2,349
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 0.8A VESM | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | P-Channel | - | 20V | 800mA (Ta) | 390 mOhm @ 800mA, 4.5V | - | - | 100pF @ 10V | 1.2V, 4.5V | ±8V | ||
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3,153
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A SSM | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | ||
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2,444
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|
Toshiba Semiconductor and Storage | MOSFET NCH 20V 800MA CST3 | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 3-XFDFN | CST3 | 500mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | ||
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3,992
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A VESM | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | ||
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2,121
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Diodes Incorporated | MOSFET N-CH 100V 800MA SOT223 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | - | 100V | 800mA (Ta) | 1.5 Ohm @ 1.5A, 10V | 2.4V @ 1mA | - | 100pF @ 25V | 5V, 10V | ±20V | ||
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1,204
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ON Semiconductor | MOSFET P-CH 150V 0.8A 3SSOT | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 1.5W (Ta) | P-Channel | - | 150V | 800mA (Ta) | 1.2 Ohm @ 800mA, 10V | 4V @ 250µA | 4.1nC @ 10V | 210pF @ 75V | 6V, 10V | ±25V |
