- Part Status :
- Packaging :
- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
15 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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966
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EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 40V | 33A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | 1200pF @ 20V | 5V | +6V, -5V | ||
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943
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|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 40V | 33A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | 1200pF @ 20V | 5V | +6V, -5V | ||
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GET PRICE |
739
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|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 40V | 33A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | 1200pF @ 20V | 5V | +6V, -5V | ||
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3,764
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|
Rohm Semiconductor | NCH 250V/33A POWER MOSFET | Automotive, AEC-Q101 | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | LPTS | 211W (Tc) | N-Channel | - | 250V | 33A (Ta) | 105 mOhm @ 16.5A, 10V | 5V @ 1mA | 80nC @ 10V | 4500pF @ 25V | 10V | ±30V | ||
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2,716
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Rohm Semiconductor | NCH 250V/33A POWER MOSFET | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | LPTS | 211W (Tc) | N-Channel | - | 250V | 33A (Ta) | 105 mOhm @ 16.5A, 10V | 5V @ 1mA | 80nC @ 10V | 4500pF @ 25V | 10V | ±30V | |||
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1,137
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Rohm Semiconductor | NCH 250V/33A POWER MOSFET | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | LPTS | 211W (Tc) | N-Channel | - | 250V | 33A (Ta) | 105 mOhm @ 16.5A, 10V | 5V @ 1mA | 80nC @ 10V | 4500pF @ 25V | 10V | ±30V | |||
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3,301
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ON Semiconductor | MOSFET P-CHANNEL 40V 33A ATPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | ATPAK | 48W (Tc) | P-Channel | - | 40V | 33A (Ta) | 25 mOhm @ 15A, 10V | 2.6V @ 1mA | 29nC @ 10V | 1380pF @ 20V | 4.5V, 10V | ±20V | ||
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2,537
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ON Semiconductor | MOSFET P-CHANNEL 40V 33A ATPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | ATPAK | 48W (Tc) | P-Channel | - | 40V | 33A (Ta) | 25 mOhm @ 15A, 10V | 2.6V @ 1mA | 29nC @ 10V | 1380pF @ 20V | 4.5V, 10V | ±20V | |||
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1,795
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ON Semiconductor | MOSFET P-CHANNEL 40V 33A ATPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | ATPAK | 48W (Tc) | P-Channel | - | 40V | 33A (Ta) | 25 mOhm @ 15A, 10V | 2.6V @ 1mA | 29nC @ 10V | 1380pF @ 20V | 4.5V, 10V | ±20V | |||
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1,235
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 33A SOP8 | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | N-Channel | - | 200V | 33A (Ta) | 29 mOhm @ 16.5A, 10V | 4V @ 1mA | 22nC @ 10V | 2200pF @ 100V | 10V | ±20V | ||
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1,287
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N-CH 200V 33A SOP8 | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | N-Channel | - | 200V | 33A (Ta) | 29 mOhm @ 16.5A, 10V | 4V @ 1mA | 22nC @ 10V | 2200pF @ 100V | 10V | ±20V | |||
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2,667
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N-CH 200V 33A SOP8 | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | N-Channel | - | 200V | 33A (Ta) | 29 mOhm @ 16.5A, 10V | 4V @ 1mA | 22nC @ 10V | 2200pF @ 100V | 10V | ±20V | |||
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2,404
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 33A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 125W (Tc) | N-Channel | - | 100V | 33A (Ta) | 9.7 mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | 2050pF @ 10V | 10V | ±20V | ||
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725
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 33A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 125W (Tc) | N-Channel | - | 100V | 33A (Ta) | 9.7 mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | 2050pF @ 10V | 10V | ±20V | |||
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1,127
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 33A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 125W (Tc) | N-Channel | - | 100V | 33A (Ta) | 9.7 mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | 2050pF @ 10V | 10V | ±20V |
