- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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685
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Vishay Siliconix | MOSFET P-CHAN 40V | TrenchFET® Gen III | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1W (Ta), 1.7W (Tc) | P-Channel | - | 40V | 2.7A (Ta), 3.6A (Tc) | 75 mOhm @ 2.7A, 10V | 2.5V @ 250µA | 19nC @ 10V | 650pF @ 20V | 4.5V, 10V | ±20V | ||
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3,353
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Vishay Siliconix | MOSFET P-CHAN 40V | TrenchFET® Gen III | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1W (Ta), 1.7W (Tc) | P-Channel | - | 40V | 2.7A (Ta), 3.6A (Tc) | 75 mOhm @ 2.7A, 10V | 2.5V @ 250µA | 19nC @ 10V | 650pF @ 20V | 4.5V, 10V | ±20V | |||
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1,492
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Vishay Siliconix | MOSFET P-CHAN 40V | TrenchFET® Gen III | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1W (Ta), 1.7W (Tc) | P-Channel | - | 40V | 2.7A (Ta), 3.6A (Tc) | 75 mOhm @ 2.7A, 10V | 2.5V @ 250µA | 19nC @ 10V | 650pF @ 20V | 4.5V, 10V | ±20V |
