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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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7 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,801
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NXP USA Inc. | MOSFET N-CH 100V 11.6A SOT96-1 | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 8.9W (Tc) | N-Channel | - | 100V | 11.6A (Tc) | 28 mOhm @ 6A, 10V | 4V @ 1mA | 35nC @ 10V | 1965pF @ 25V | 10V | ±20V | ||
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1,309
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Infineon Technologies | MOSFET N-CH 560V 11.6A TO-263 | CoolMOS™ | Last Time Buy | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 125W (Tc) | N-Channel | - | 560V | 11.6A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 49nC @ 10V | 1200pF @ 25V | 10V | ±20V | ||
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1,690
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Infineon Technologies | MOSFET N-CH 560V 11.6A TO-263 | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 125W (Tc) | N-Channel | - | 560V | 11.6A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 49nC @ 10V | 1200pF @ 25V | 10V | ±20V | ||
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2,556
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Infineon Technologies | MOSFET N-CH 560V 11.6A TO-263 | CoolMOS™ | Last Time Buy | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 125W (Tc) | N-Channel | - | 560V | 11.6A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 49nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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1,374
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Vishay Siliconix | MOSFET P-CH 30V 11.6A 8-SOIC | TrenchFET® | Last Time Buy | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5W (Tc) | P-Channel | - | 30V | 11.6A (Tc) | 20.5 mOhm @ 10A, 10V | 2.5V @ 250µA | 36nC @ 10V | 1075pF @ 15V | 4.5V, 10V | ±25V | ||
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3,513
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Vishay Siliconix | MOSFET P-CH 30V 11.6A 8-SOIC | TrenchFET® | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5W (Tc) | P-Channel | - | 30V | 11.6A (Tc) | 20.5 mOhm @ 10A, 10V | 2.5V @ 250µA | 36nC @ 10V | 1075pF @ 15V | 4.5V, 10V | ±25V | |||
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1,753
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET P-CH 30V 11.6A 8-SOIC | TrenchFET® | Last Time Buy | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5W (Tc) | P-Channel | - | 30V | 11.6A (Tc) | 20.5 mOhm @ 10A, 10V | 2.5V @ 250µA | 36nC @ 10V | 1075pF @ 15V | 4.5V, 10V | ±25V |