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- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,716
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Nexperia USA Inc. | MOSFET N-CH 40V 100A D2PAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 211W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.9 mOhm @ 10A, 10V | 4V @ 1mA | 71nC @ 10V | 4491pF @ 20V | 10V | ±20V | |||
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2,618
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Nexperia USA Inc. | MOSFET N-CH 40V 100A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 211W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.9 mOhm @ 10A, 10V | 4V @ 1mA | 71nC @ 10V | 4491pF @ 20V | 10V | ±20V | ||||
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3,424
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Nexperia USA Inc. | MOSFET N-CH 40V 100A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 211W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.9 mOhm @ 10A, 10V | 4V @ 1mA | 71nC @ 10V | 4491pF @ 20V | 10V | ±20V | ||||
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1,506
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Vishay Siliconix | MOSFET N-CH 20V 50A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 50W (Tc) | N-Channel | - | 20V | 50A (Tc) | 2.9 mOhm @ 10A, 10V | 2.6V @ 250µA | 60nC @ 10V | 2747pF @ 10V | 4.5V, 10V | ±20V | |||
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2,609
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Vishay Siliconix | MOSFET N-CH 20V 50A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 50W (Tc) | N-Channel | - | 20V | 50A (Tc) | 2.9 mOhm @ 10A, 10V | 2.6V @ 250µA | 60nC @ 10V | 2747pF @ 10V | 4.5V, 10V | ±20V | ||||
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3,607
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Vishay Siliconix | MOSFET N-CH 20V 50A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 50W (Tc) | N-Channel | - | 20V | 50A (Tc) | 2.9 mOhm @ 10A, 10V | 2.6V @ 250µA | 60nC @ 10V | 2747pF @ 10V | 4.5V, 10V | ±20V |