- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,305
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Infineon Technologies | MOSFET N-CH 650V 12A TO263-3 | CoolMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | |||
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1,431
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Infineon Technologies | MOSFET N-CH 550V 13A TO-263 | CoolMOS™ | Last Time Buy | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 114W (Tc) | N-Channel | - | 550V | 13A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36nC @ 10V | 1420pF @ 100V | 10V | ±20V |