Manufacture :
Supplier Device Package :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFT6N100Q
Per Unit
$9.33
RFQ
795
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 6A TO-268 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 180W (Tc) N-Channel - 1000V 6A (Tc) 1.9 Ohm @ 3A, 10V 4.5V @ 2.5mA 48nC @ 10V 2200pF @ 25V 10V ±20V
IXFT6N100F
Per Unit
$10.37
RFQ
2,744
Ships today + free overnight shipping
IXYS-RF MOSFET N-CH 1000V 6A TO268 HiPerRF™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 (IXFT) 180W (Tc) N-Channel - 1000V 6A (Tc) 1.9 Ohm @ 3A, 10V 5.5V @ 2.5mA 54nC @ 10V 1770pF @ 25V 10V ±20V
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