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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Infineon Technologies | MOSFET P-CH 20V 3.7A SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | - | 20V | 3.7A (Ta) | 65 mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 633pF @ 10V | 2.5V, 4.5V | ±12V | ||
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Infineon Technologies | MOSFET P-CH 20V 3.7A SOT-23 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | - | 20V | 3.7A (Ta) | 65 mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 633pF @ 10V | 2.5V, 4.5V | ±12V | ||
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2,535
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Infineon Technologies | MOSFET P-CH 20V 3.7A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | - | 20V | 3.7A (Ta) | 65 mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 633pF @ 10V | 2.5V, 4.5V | ±12V | |||
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1,788
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Infineon Technologies | MOSFET P-CH 20V 3.7A SOT-23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | - | 20V | 3.7A (Ta) | 65 mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 633pF @ 10V | 2.5V, 4.5V | ±12V |
