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- Supplier Device Package :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,133
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Microsemi Corporation | MOSFET N-CH 600V 30A D3PAK | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D3Pak | 219W (Tc) | N-Channel | - | 600V | 30A (Tc) | 125 mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88nC @ 10V | 2267pF @ 25V | 10V | ±20V | ||
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1,896
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Infineon Technologies | MOSFET N-CH 600V 30A TO263 | CoolMOS™ | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 219W (Tc) | N-Channel | - | 600V | 30A (Tc) | 125 mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96nC @ 10V | 2127pF @ 100V | 10V | ±20V | ||
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624
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Infineon Technologies | MOSFET N-CH 600V 30A TO263 | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 219W (Tc) | N-Channel | - | 600V | 30A (Tc) | 125 mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96nC @ 10V | 2127pF @ 100V | 10V | ±20V | |||
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2,078
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Infineon Technologies | MOSFET N-CH 600V 30A TO263 | CoolMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 219W (Tc) | N-Channel | - | 600V | 30A (Tc) | 125 mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96nC @ 10V | 2127pF @ 100V | 10V | ±20V |
