Operating Temperature :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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$0.34
RFQ
2,632
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active - MOSFET (Metal Oxide) 175°C Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.8W (Ta), 81W (Tc) N-Channel - 40V 87A (Ta), 49A (Tc) 6 mOhm @ 24.5A, 10V 2.4V @ 200µA 30nC @ 10V 2700pF @ 20V 4.5V, 10V ±20V
TPH7R204PL,LQ
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RFQ
2,959
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 69W (Tc) N-Channel - 40V 48A (Tc) 9.7 mOhm @ 15A, 4.5V 2.4V @ 200µA 24nC @ 10V 2040pF @ 20V 4.5V, 10V ±20V
TPH7R204PL,LQ
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$0.86
RFQ
1,128
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 69W (Tc) N-Channel - 40V 48A (Tc) 9.7 mOhm @ 15A, 4.5V 2.4V @ 200µA 24nC @ 10V 2040pF @ 20V 4.5V, 10V ±20V
TPH7R204PL,LQ
Per Unit
$0.30
RFQ
692
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 69W (Tc) N-Channel - 40V 48A (Tc) 9.7 mOhm @ 15A, 4.5V 2.4V @ 200µA 24nC @ 10V 2040pF @ 20V 4.5V, 10V ±20V
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