Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIR874DP-T1-GE3
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RFQ
3,404
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 25V 20A PPAK SO-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 3.9W (Ta), 29.8W (Tc) N-Channel - 25V 20A (Tc) 9.4 mOhm @ 10A, 10V 2.2V @ 250µA 27nC @ 10V 985pF @ 15V 4.5V, 10V ±20V
SIR474DP-T1-GE3
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RFQ
2,329
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Vishay Siliconix MOSFET N-CH 30V 20A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount - 3.9W (Ta), 29.8W (Tc) N-Channel - 30V 20A (Tc) 9.5 mOhm @ 10A, 10V 2.2V @ 250µA 27nC @ 10V 985pF @ 15V 10V ±20V
SIR474DP-T1-GE3
Per Unit
$1.02
RFQ
1,785
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 30V 20A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount - 3.9W (Ta), 29.8W (Tc) N-Channel - 30V 20A (Tc) 9.5 mOhm @ 10A, 10V 2.2V @ 250µA 27nC @ 10V 985pF @ 15V 10V ±20V
SIR474DP-T1-GE3
Per Unit
$0.36
RFQ
2,837
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 30V 20A PPAK SO-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 3.9W (Ta), 29.8W (Tc) N-Channel - 30V 20A (Tc) 9.5 mOhm @ 10A, 10V 2.2V @ 250µA 27nC @ 10V 985pF @ 15V 10V ±20V
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