- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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- Input Capacitance (Ciss) (Max) @ Vds :
7 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,330
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Infineon Technologies | MOSFET N-CH 8TDSON | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-23 | 63W (Tc) | N-Channel | - | 40V | 60A (Tc) | 6 mOhm @ 30A, 10V | 4V @ 30µA | 33nC @ 10V | 2650pF @ 25V | 10V | ±20V | ||
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2,220
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Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TSDSON-8 | 2.1W (Ta), 50W (Tc) | N-Channel | - | 60V | 20A (Tc) | 11 mOhm @ 20A, 10V | 4V @ 23µA | 33nC @ 10V | 2700pF @ 30V | 10V | ±20V | ||
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2,734
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Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TSDSON-8 | 2.1W (Ta), 50W (Tc) | N-Channel | - | 60V | 20A (Tc) | 11 mOhm @ 20A, 10V | 4V @ 23µA | 33nC @ 10V | 2700pF @ 30V | 10V | ±20V | |||
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3,717
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Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TSDSON-8 | 2.1W (Ta), 50W (Tc) | N-Channel | - | 60V | 20A (Tc) | 11 mOhm @ 20A, 10V | 4V @ 23µA | 33nC @ 10V | 2700pF @ 30V | 10V | ±20V | |||
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696
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 32A 8-SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 61W (Tc) | N-Channel | - | 100V | 32A (Tc) | 8.8 mOhm @ 16A, 10V | 4V @ 500µA | 33nC @ 10V | 2800pF @ 50V | 10V | ±20V | ||
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3,197
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 32A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 61W (Tc) | N-Channel | - | 100V | 32A (Tc) | 8.8 mOhm @ 16A, 10V | 4V @ 500µA | 33nC @ 10V | 2800pF @ 50V | 10V | ±20V | |||
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2,208
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 32A 8-SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 61W (Tc) | N-Channel | - | 100V | 32A (Tc) | 8.8 mOhm @ 16A, 10V | 4V @ 500µA | 33nC @ 10V | 2800pF @ 50V | 10V | ±20V |