- Part Status :
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- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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12 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,240
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Infineon Technologies | MOSFET N-CH 85V 95A TO263-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 167W (Tc) | N-Channel | - | 85V | 95A (Tc) | 8.2 mOhm @ 95A, 10V | 4V @ 130µA | 99nC @ 10V | 6690pF @ 40V | 10V | ±20V | |||
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3,630
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Infineon Technologies | MOSFET N-CH 40V 100A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 99W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.1 mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | 3171pF @ 25V | 10V | ±20V | |||
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1,155
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Vishay Siliconix | MOSFET N-CH 650V 20.3A PWRPAK8X8 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 20.3A (Tc) | 170 mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | 2404pF @ 100V | 10V | ±30V | |||
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2,906
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Vishay Siliconix | MOSFET N-CH 650V 20.3A PWRPAK8X8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 20.3A (Tc) | 170 mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | 2404pF @ 100V | 10V | ±30V | ||||
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1,251
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Vishay Siliconix | MOSFET N-CH 650V 20.3A PWRPAK8X8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 20.3A (Tc) | 170 mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | 2404pF @ 100V | 10V | ±30V | ||||
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2,145
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Infineon Technologies | MOSFET N-CH 40V 100A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 99W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.1 mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | 3171pF @ 25V | 10V | ±20V | ||||
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1,302
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Toshiba Semiconductor and Storage | MOSFET N-CH 45V 150A | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | - | 45V | 150A (Tc) | 1.04 mOhm @ 50A, 10V | 2.4V @ 1mA | 99nC @ 10V | 9600pF @ 22.5V | 4.5V, 10V | ±20V | |||
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2,021
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Toshiba Semiconductor and Storage | MOSFET N-CH 45V 150A | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | - | 45V | 150A (Tc) | 1.04 mOhm @ 50A, 10V | 2.4V @ 1mA | 99nC @ 10V | 9600pF @ 22.5V | 4.5V, 10V | ±20V | ||||
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782
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Toshiba Semiconductor and Storage | MOSFET N-CH 45V 150A | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | - | 45V | 150A (Tc) | 1.04 mOhm @ 50A, 10V | 2.4V @ 1mA | 99nC @ 10V | 9600pF @ 22.5V | 4.5V, 10V | ±20V | ||||
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3,051
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ON Semiconductor | MOSFET N-CH 200V 62A D2PAK | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 260W (Tc) | N-Channel | - | 200V | 62A (Tc) | 27 mOhm @ 31A, 10V | 5V @ 250µA | 99nC @ 10V | 7230pF @ 25V | 10V | ±30V | |||
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1,396
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ON Semiconductor | MOSFET N-CH 200V 62A D2PAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 260W (Tc) | N-Channel | - | 200V | 62A (Tc) | 27 mOhm @ 31A, 10V | 5V @ 250µA | 99nC @ 10V | 7230pF @ 25V | 10V | ±30V | ||||
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2,927
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ON Semiconductor | MOSFET N-CH 200V 62A D2PAK | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 260W (Tc) | N-Channel | - | 200V | 62A (Tc) | 27 mOhm @ 31A, 10V | 5V @ 250µA | 99nC @ 10V | 7230pF @ 25V | 10V | ±30V |