- Series :
- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
17 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,136
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NXP USA Inc. | MOSFET N-CH 60V QFN3333 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 65W (Tc) | N-Channel | - | 60V | 40A (Tc) | 14 mOhm @ 10A, 10V | 4V @ 1mA | 19.6nC @ 10V | 1264pF @ 30V | 10V | ±20V | ||
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1,775
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NXP USA Inc. | MOSFET N-CH 60V QFN3333 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 65W (Tc) | N-Channel | - | 60V | 40A (Tc) | 14 mOhm @ 10A, 10V | 4V @ 1mA | 19.6nC @ 10V | 1264pF @ 30V | 10V | ±20V | ||
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3,740
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NXP USA Inc. | MOSFET N-CH 60V QFN3333 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 65W (Tc) | N-Channel | - | 60V | 40A (Tc) | 14 mOhm @ 10A, 10V | 4V @ 1mA | 19.6nC @ 10V | 1264pF @ 30V | 10V | ±20V | ||
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1,406
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Diodes Incorporated | MOSFET P-CH 30V 10.3A UDFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 2W (Ta) | P-Channel | - | 30V | 10.3A (Ta) | 19 mOhm @ 4.5A, 10V | 3V @ 250µA | 19.6nC @ 10V | 1204pF @ 15V | 4V, 10V | ±25V | |||
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1,411
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Diodes Incorporated | MOSFET P-CH 30V 10.3A UDFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 2W (Ta) | P-Channel | - | 30V | 10.3A (Ta) | 19 mOhm @ 4.5A, 10V | 3V @ 250µA | 19.6nC @ 10V | 1204pF @ 15V | 4V, 10V | ±25V | |||
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3,649
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Diodes Incorporated | MOSFET P-CH 30V 10.4A UDFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 2W (Ta) | P-Channel | - | 30V | 10.4A (Ta) | 19 mOhm @ 4.5A, 10V | 3V @ 250µA | 19.6nC @ 10V | 1204pF @ 15V | 4V, 10V | ±25V | |||
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3,286
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Diodes Incorporated | MOSFET P-CH 30V 10.4A UDFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 2W (Ta) | P-Channel | - | 30V | 10.4A (Ta) | 19 mOhm @ 4.5A, 10V | 3V @ 250µA | 19.6nC @ 10V | 1204pF @ 15V | 4V, 10V | ±25V | |||
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3,805
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Vishay Siliconix | MOSFET N-CH 30V 8A 6TSOP | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2.1W (Ta), 2.98W (Tc) | N-Channel | - | 30V | 8A (Tc) | 28 mOhm @ 7A, 10V | 3V @ 250µA | 19.6nC @ 10V | 735pF @ 15V | 4.5V, 10V | ±20V | ||
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3,331
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 6A TO252 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 110W (Tc) | N-Channel | - | 800V | 6A (Tc) | 950 mOhm @ 3A, 10V | 4V @ 250µA | 19.6nC @ 10V | 691pF @ 100V | 10V | ±30V | ||
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1,293
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 6A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 110W (Tc) | N-Channel | - | 800V | 6A (Tc) | 950 mOhm @ 3A, 10V | 4V @ 250µA | 19.6nC @ 10V | 691pF @ 100V | 10V | ±30V | |||
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1,381
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 6A TO252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 110W (Tc) | N-Channel | - | 800V | 6A (Tc) | 950 mOhm @ 3A, 10V | 4V @ 250µA | 19.6nC @ 10V | 691pF @ 100V | 10V | ±30V | |||
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1,735
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Vishay Siliconix | MOSFET N-CH 30V 8A 6TSOP | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2.1W (Ta), 2.98W (Tc) | N-Channel | - | 30V | 8A (Tc) | 28 mOhm @ 7A, 10V | 3V @ 250µA | 19.6nC @ 10V | 735pF @ 15V | 4.5V, 10V | ±20V | ||
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3,041
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Vishay Siliconix | MOSFET N-CH 30V 8A 6TSOP | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2.1W (Ta), 2.98W (Tc) | N-Channel | - | 30V | 8A (Tc) | 28 mOhm @ 7A, 10V | 3V @ 250µA | 19.6nC @ 10V | 735pF @ 15V | 4.5V, 10V | ±20V | |||
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717
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Vishay Siliconix | MOSFET N-CH 30V 8A 6TSOP | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2.1W (Ta), 2.98W (Tc) | N-Channel | - | 30V | 8A (Tc) | 28 mOhm @ 7A, 10V | 3V @ 250µA | 19.6nC @ 10V | 735pF @ 15V | 4.5V, 10V | ±20V | |||
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2,971
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Vishay Siliconix | MOSFET N-CH 800V 2.8A DPAK | E | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 62.5W (Tc) | N-Channel | - | 800V | 2.8A (Tc) | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | 315pF @ 100V | 10V | ±30V | ||
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2,108
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 800V 2.8A DPAK | E | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 62.5W (Tc) | N-Channel | - | 800V | 2.8A (Tc) | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | 315pF @ 100V | 10V | ±30V | |||
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2,342
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 800V 2.8A DPAK | E | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 62.5W (Tc) | N-Channel | - | 800V | 2.8A (Tc) | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | 315pF @ 100V | 10V | ±30V |
