- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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899
Ships today + free overnight shipping
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STMicroelectronics | MOSFET N-CH 40V 80A DPAK | DeepGATE™, STripFET™ VI | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 110W (Tc) | N-Channel | - | 40V | 80A (Tc) | 4 mOhm @ 40A, 10V | 3V @ 250µA | 80nC @ 10V | 4300pF @ 25V | 5V, 10V | ±20V | ||
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1,310
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STMicroelectronics | MOSFET N-CH 40V 80A D2PAK | DeepGATE™, STripFET™ VI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 40V | 80A (Tc) | 4 mOhm @ 40A, 10V | 3V @ 250µA | 80nC @ 10V | 4300pF @ 25V | 5V, 10V | ±20V | |||
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2,974
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ON Semiconductor | T6 40V MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 3.8W (Ta), 128W (Tc) | N-Channel | - | 40V | 41A (Ta), 235A (Tc) | 1.3 mOhm @ 50A, 10V | 3.5V @ 250µA | 13nC @ 10V | 4300pF @ 25V | 10V | ±20V | |||
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2,362
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Nexperia USA Inc. | MOSFET N-CH 40V 75A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK | 272W (Tc) | N-Channel | Current Sensing | 40V | 75A (Tc) | 6 mOhm @ 50A, 10V | 4V @ 1mA | 120nC @ 10V | 4300pF @ 25V | 10V | ±20V | |||
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1,145
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ON Semiconductor | MOSFET N-CH 40V 41A 235A 5DFN | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 3.8W (Ta), 128W (Tc) | N-Channel | - | 40V | 41A (Ta), 235A (Tc) | 1.3 mOhm @ 50A, 10V | 3.5V @ 250µA | 65nC @ 10V | 4300pF @ 25V | 10V | ±20V | |||
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1,976
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STMicroelectronics | MOSFET N-CH 75V 75A D2PAK | STripFET™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 300W (Tc) | N-Channel | - | 75V | 75A (Tc) | 11 mOhm @ 37.5A, 10V | 2.5V @ 250µA | 90nC @ 5V | 4300pF @ 25V | 5V, 10V | ±15V | |||
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1,532
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Vishay Siliconix | MOSFET N-CH 100V 60A D2PAK | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.75W (Ta), 150W (Tc) | N-Channel | - | 100V | 60A (Tc) | 16.5 mOhm @ 30A, 10V | 4V @ 250µA | 100nC @ 10V | 4300pF @ 25V | 6V, 10V | ±20V |
