- Series :
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- Operating Temperature :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Renesas Electronics America | MOSFET N-CH 55V 22A TO-252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (MP-3ZK) | 1.2W (Ta), 45W (Tc) | N-Channel | 55V | 22A (Ta) | 37 mOhm @ 11A, 10V | 2.5V @ 250µA | 23nC @ 5V | 1100pF @ 25V | 4.5V, 10V | ±20V | ||
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728
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ON Semiconductor | T6 40V DPAK EXPANSION AND | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 3W (Ta), 30W (Tc) | N-Channel | 40V | 14A (Ta), 45A (Tc) | 7.7 mOhm @ 15A, 10V | 2.2V @ 30µA | 20nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
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2,858
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Rohm Semiconductor | NCH 190V 7.5A POWER MOSFET | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 52W (Tc) | N-Channel | 190V | 7.5A (Tc) | 336 mOhm @ 3.8A, 10V | 2.5V @ 1mA | 30nC @ 10V | 1100pF @ 25V | 4V, 10V | ±20V | |||
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2,585
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Rohm Semiconductor | MOSFET N-CH 190V 7.5A CPT3 | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | 190V | 7.5A (Tc) | 336 mOhm @ 3.8A, 10V | 2.5V @ 1mA | 30nC @ 10V | 1100pF @ 25V | 4V, 10V | ±30V |
