- Manufacture :
- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,772
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Vishay Siliconix | MOSFET N-CH 20V 4.4A 1206-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 1.1W (Ta) | N-Channel | Schottky Diode (Isolated) | 20V | 4.4A (Ta) | 40 mOhm @ 4.4A, 4.5V | 1V @ 250µA | 7.5nC @ 4.5V | - | 1.8V, 4.5V | ±8V | ||
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3,924
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|
Vishay Siliconix | MOSFET P-CH 20V 2.7A 1206-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 1.1W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 7.7nC @ 4.5V | - | 1.8V, 4.5V | ±8V | ||
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822
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|
Vishay Siliconix | MOSFET P-CH 20V 2.7A 1206-8 | LITTLE FOOT® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 1.1W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 7.7nC @ 4.5V | - | 1.8V, 4.5V | ±8V | ||
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3,737
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Diodes Incorporated | MOSFET P-CH 20V 3.3A | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.1W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3.3A (Ta) | 85 mOhm @ 3.05A, 10V | 2.2V @ 250µA | 7.8nC @ 10V | 353pF @ 15V | 4.5V, 10V | ±20V | |||
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1,685
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ON Semiconductor | MOSFET P-CH 20V 3.2A CHIPFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET™ | 1.1W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3.2A (Tj) | 80 mOhm @ 3.2A, 4.5V | 1.5V @ 250µA | 7.4nC @ 4.5V | 680pF @ 10V | 1.8V, 4.5V | ±8V |
