Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI1424EDH-T1-GE3
Per Unit
$0.48
RFQ
2,406
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 20V 4A SOT-363 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 - 1.56W (Ta), 2.8W (Tc) N-Channel 20V 4A (Tc) 33 mOhm @ 5A, 4.5V 1V @ 250µA 18nC @ 8V - 4.5V ±8V
SI1427EDH-T1-GE3
Per Unit
$0.48
RFQ
3,360
Ships today + free overnight shipping
Vishay Siliconix MOSFET P-CH 20V 2A SOT-363 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 (SOT-363) 1.56W (Ta), 2.8W (Tc) P-Channel 20V 2A (Tc) 64 mOhm @ 3A, 4.5V 1V @ 250µA 21nC @ 8V - 1.5V, 4.5V ±8V
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