Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIE820DF-T1-E3
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RFQ
3,283
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Vishay Siliconix MOSFET N-CH 20V 50A 10-POLARPAK TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (S) 5.2W (Ta), 104W (Tc) N-Channel - 20V 50A (Tc) 3.5 mOhm @ 18A, 4.5V 2V @ 250µA 143nC @ 10V 4300pF @ 10V 2.5V, 4.5V ±12V
SIE822DF-T1-GE3
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$3.00
RFQ
2,149
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Vishay Siliconix MOSFET N-CH 20V 50A POLARPAK TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (S) 5.2W (Ta), 104W (Tc) N-Channel - 20V 50A (Tc) 3.4 mOhm @ 18.3A, 10V 3V @ 250µA 78nC @ 10V 4200pF @ 10V 4.5V, 10V ±20V
SIE820DF-T1-GE3
Per Unit
$3.25
RFQ
1,728
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 20V 50A POLARPAK TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (S) 5.2W (Ta), 104W (Tc) N-Channel - 20V 50A (Tc) 3.5 mOhm @ 18A, 4.5V 2V @ 250µA 143nC @ 10V 4300pF @ 10V 2.5V, 4.5V ±12V
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