- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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- Drive Voltage (Max Rds On, Min Rds On) :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,619
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Vishay Siliconix | MOSFET P-CH 20V 2.3A SC70-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) | 1W (Ta) | P-Channel | - | 20V | 2.3A (Ta) | 115 mOhm @ 2.9A, 4.5V | 450mV @ 100µA (Min) | 8nC @ 4.5V | - | 1.8V, 4.5V | ±12V | ||
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3,432
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Vishay Siliconix | MOSFET P-CH 20V 2.3A SC-70-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) | 1W (Ta) | P-Channel | - | 20V | 2.3A (Ta) | 115 mOhm @ 2.9A, 4.5V | 450mV @ 100µA (Min) | 8nC @ 4.5V | - | 1.8V, 4.5V | ±12V | ||
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1,357
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Diodes Incorporated | MOSFET N-CH 20V 2.3A SOT23-3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 600mW (Ta) | N-Channel | - | 20V | 2.3A (Ta) | 70 mOhm @ 3A, 4.5V | 1V @ 250µA | - | 217pF @ 10V | 1.5V, 4.5V | ±12V | ||
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830
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Central Semiconductor Corp | MOSFET P-CH 20V 2.3A SOT-23F | - | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 350mW (Ta) | P-Channel | - | 20V | 2.3A (Ta) | 88 mOhm @ 1.2A, 5V | 1.4V @ 250µA | 12nC @ 5V | 800pF @ 10V | 2.5V, 5V | 12V | |||
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1,549
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.3A TSM | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 20V | 2.3A (Ta) | 127 mOhm @ 1A, 4V | - | 6.1nC @ 4V | 335pF @ 10V | 1.8V, 4V | ±8V | |||
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2,070
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ON Semiconductor | MOSFET P-CH 20V 2.3A 6-WDFN | µCool™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.3A (Ta) | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | 531pF @ 10V | 1.8V, 4.5V | ±8V | |||
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3,798
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Diodes Incorporated | MOSFET P-CH 20V 2.3A SOT23-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | 1.1W (Ta) | P-Channel | - | 20V | 2.3A (Ta) | 200 mOhm @ 1.6A, 4.5V | 700mV @ 250µA | 5.8nC @ 4.5V | 320pF @ 15V | 2.7V, 4.5V | ±12V | |||
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2,525
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Infineon Technologies | MOSFET N-CH 20V 2.3A SOT23 | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 500mW (Ta) | N-Channel | - | 20V | 2.3A (Ta) | 57 mOhm @ 2.3A, 2.5V | 0.75V @ 11µA | 1.7nC @ 2.5V | 529pF @ 10V | 1.8V, 2.5V | ±8V | |||
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910
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Infineon Technologies | MOSFET N-CH 20V 2.3A SOT23 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 500mW (Ta) | N-Channel | - | 20V | 2.3A (Ta) | 57 mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | 529pF @ 10V | 1.8V, 2.5V | ±8V |
